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PD - 94154
HEXFET(R) POWER MOSFET SURFACE MOUNT (SMD-1)
IRF5N5210 100V, P-CHANNEL
Product Summary
Part Number
IRF5N5210 BVDSS
-100V
RDS(on) 0.060
ID -31A
Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
SMD-1
Features:
n n n n n n n n
Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25C ID @ VGS = -10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight -31 -19 -124 125 1.0 20 340 -19 12.5 4.0 -55 to 150 300 (for 5 s) 2.6 (Typical)
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
For footnotes refer to the last page
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1
03/26/01
IRF5N5210
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter Min Typ Max Units
-- -0.11 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- 0.06 -4.0 -- -25 -250 -100 100 215 30 115 28 150 103 116 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = -250A Reference to 25C, ID = -1.0mA VGS = -10V, ID = -19A VDS = VGS, ID = -250A VDS = -50V, IDS = -19A VDS = -100V ,VGS=0V VDS = -80V, VGS = 0V, TJ =125C VGS = -20V VGS = 20V VGS =-10V, ID = -19A VDS = -80V VDD = -50V, ID = -19A, VGS =-10V, RG = 2.5
BVDSS Drain-to-Source Breakdown Voltage -100 BV DSS/T J Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistance VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 10 IDSS Zero Gate Voltage Drain Current -- -- IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- --
nA nC
ns
nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
2700 830 470
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -31 -124 -1.6 290 2.1
Test Conditions
A
V ns C Tj = 25C, IS = -19A, VGS = 0V Tj = 25C, IF = -19A, di/dt 100A/s VDD -50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max Units
-- -- 1.0
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
2
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IRF5N5210
1000
-I D , Drain-to-Source Current (A)
100
10
-I D , Drain-to-Source Current (A)
VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP
1000
100
VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP
10
-4.5V
-4.5V
1
1
0.1 0.1
20s PULSE WIDTH T = 25 C
J 1 10 100
0.1 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = -31A
-I D , Drain-to-Source Current (A)
2.0
100
TJ = 25 C TJ = 150 C
1.5
1.0
10
0.5
1 4 6 8
15
V DS = -50V 20s PULSE WIDTH 10 12
0.0 -60 -40 -20
VGS = -10V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRF5N5210
6000
5000
-VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = -19A
16
C, Capacitance (pF)
VDS = -80V VDS = -50V VDS = -20V
4000
Ciss
3000
12
2000
C oss C rss
8
1000
4
0 1 10 100
0 0 40 80
FOR TEST CIRCUIT SEE FIGURE 13
120 160 200 240
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
-ISD , Reverse Drain Current (A)
100
TJ = 150 C
10
TJ = 25 C
1
-I D, Drain-to-Source Current (A)
100
10
1ms
Tc = 25C Tj = 150C Single Pulse 1 1 10 100 1000 -VDS , Drain-toSource Voltage (V)
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
10ms
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF5N5210
35
V DS
30
RD
VGS
-ID , Drain Current (A)
D.U.T.
+
25
20 15
VGS Pulse Width 1 s Duty Factor 0.1 %
10 5 0 25 50 75 100 125 150
Fig 10a. Switching Time Test Circuit
VGS
VGS 10%
td(on) tr t d(off) tf
TC , Case Temperature ( C)
90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1
P DM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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-
RG
V DD
5
IRF5N5210
800
VDS
L
EAS , Single Pulse Avalanche Energy (mJ)
RG
D .U .T
IA S
VD D A D R IV E R
600
ID -8.5A -12A BOTTOM -19A TOP
VGS -20V
tp
0.0 1
400
15V
200
Fig 12a. Unclamped Inductive Test Circuit
IAS
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
-12V 12V
.2F .3F
-10V
QGS VG QGD
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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+
D.U.T.
-
VDS
IRF5N5210
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = -25 V, Starting TJ = 25C, L= 1.9mH Peak IAS = -19A, VGS = -10V, RG= 25
ISD -19A, di/dt -390 A/s, Pulse width 300 s; Duty Cycle 2%
VDD -100V, TJ 150C
Case Outline and Dimensions -- SMD-1
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/01
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